By inserting a thin Gd(AcA)(3)phen layer in the electroluminescent devices ITO/Alq/Al and ITO/TPD/Eu(DBM)(3)phen/Alq/Al, the quantum efficiency is increased in both devices and the emission color of the second device is changed, These results are supposed to be due to the carrier-blocking effect of the thin Gd(AcA)(3)phen layer which changes the distribution of electrons and holes in the devices, (C) 1997 Elsevier Science S.A.
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Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R ChinaNara Inst Sci & Technol, Grad Sch Mat Sci, 8916-5 Takayama Cho, Ikoma, Nara 6300192, Japan
Shan, Bowen
Xu, Xiaomin
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Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R ChinaNara Inst Sci & Technol, Grad Sch Mat Sci, 8916-5 Takayama Cho, Ikoma, Nara 6300192, Japan
Xu, Xiaomin
Yang, Shuaijun
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Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R ChinaNara Inst Sci & Technol, Grad Sch Mat Sci, 8916-5 Takayama Cho, Ikoma, Nara 6300192, Japan
Yang, Shuaijun
Koganezawa, Tomoyuki
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Japan Synchrotron Radiat Res Inst JASRI, SPring 8, 1-1-1 Kouto, Sayo, Hyogo 6795198, JapanNara Inst Sci & Technol, Grad Sch Mat Sci, 8916-5 Takayama Cho, Ikoma, Nara 6300192, Japan
Koganezawa, Tomoyuki
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Kuzuhara, Daiki
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Aratani, Naoki
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Suzuki, Mitsuharu
Miao, Qian
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Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R ChinaNara Inst Sci & Technol, Grad Sch Mat Sci, 8916-5 Takayama Cho, Ikoma, Nara 6300192, Japan