Redistribution of carriers in OEL devices by inserting a thin charge-carrier blocking layer

被引：6
|
作者：
Liang, CJ
Li, WL [1 ]
Hong, ZR
Liu, XY
Peng, JB
Liu, L
Liu, ZB
Yu, JQ
Zhao, DX
Lee, ST
机构：
[1] Chinese Acad Sci, Changchun Inst Phys, Changchun 130021, Peoples R China
[2] Chinese Acad Sci, Lab Excited State Proc, Changchun 130021, Peoples R China
[3] City Univ Hong Kong, Dept Phys & Mat Sci, Shatin, Hong Kong
来源：
SYNTHETIC METALS | 1997年 / 91卷 / 1-3期
关键词：
organic devices; electroluminescence; Gd(AcA)(3)phen blocking layer;
D O I：
10.1016/S0379-6779(98)80040-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
By inserting a thin Gd(AcA)(3)phen layer in the electroluminescent devices ITO/Alq/Al and ITO/TPD/Eu(DBM)(3)phen/Alq/Al, the quantum efficiency is increased in both devices and the emission color of the second device is changed, These results are supposed to be due to the carrier-blocking effect of the thin Gd(AcA)(3)phen layer which changes the distribution of electrons and holes in the devices, (C) 1997 Elsevier Science S.A.
引用
收藏
页码：275 / 277
页数：3
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