Effects of B2O3 and MgO on the microwave dielectric properties of MgTa2O6 ceramics

被引:15
|
作者
Dang, Mingzhao [1 ,2 ]
Lin, Huixing [1 ]
Yao, Xiaogang [1 ]
Ren, Haishen [1 ]
Xie, Tianyi [1 ]
Peng, Haiyi [1 ,2 ]
Tan, Zhenyu [1 ,3 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Hangzhou Dianzi Univ, Coll Elect Informat & Engn, Hangzhou, Zhejiang, Peoples R China
关键词
MgTa2O6; High qf; Microwave dielectric properties; Positive tau(f); TEMPERATURE; RESONATOR; CO;
D O I
10.1016/j.ceramint.2019.08.135
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
MgTa2O6 is a very promising microwave dielectric material, but the residual Ta2O5 which produced during the reaction process of MgO and Ta2O5 with stoichiometric ratio limits its further development. In this study, B2O3 and MgO sintering additives were applied to reduce Ta2O5 phase and enhance the microstructure and microwave dielectric properties. Results show that B2O3 has an advantages over MgO in improving the material properties, the best microwave dielectric properties (epsilon(r) = 27.8, Qf = 184000 GHz, tau(f) = 53 ppm/degrees C) were acquired at x(B2O3) = 0.5 wt%. The mechanisms of both B2O3 and MgO additives were analyzed in detail.
引用
收藏
页码:24244 / 24247
页数:4
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