Effects of B2O3 and MgO on the microwave dielectric properties of MgTa2O6 ceramics
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作者:
Dang, Mingzhao
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
Dang, Mingzhao
[1
,2
]
Lin, Huixing
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
Lin, Huixing
[1
]
Yao, Xiaogang
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
Yao, Xiaogang
[1
]
Ren, Haishen
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
Ren, Haishen
[1
]
Xie, Tianyi
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
Xie, Tianyi
[1
]
Peng, Haiyi
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
Peng, Haiyi
[1
,2
]
Tan, Zhenyu
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
Hangzhou Dianzi Univ, Coll Elect Informat & Engn, Hangzhou, Zhejiang, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
Tan, Zhenyu
[1
,3
]
机构:
[1] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Hangzhou Dianzi Univ, Coll Elect Informat & Engn, Hangzhou, Zhejiang, Peoples R China
MgTa2O6 is a very promising microwave dielectric material, but the residual Ta2O5 which produced during the reaction process of MgO and Ta2O5 with stoichiometric ratio limits its further development. In this study, B2O3 and MgO sintering additives were applied to reduce Ta2O5 phase and enhance the microstructure and microwave dielectric properties. Results show that B2O3 has an advantages over MgO in improving the material properties, the best microwave dielectric properties (epsilon(r) = 27.8, Qf = 184000 GHz, tau(f) = 53 ppm/degrees C) were acquired at x(B2O3) = 0.5 wt%. The mechanisms of both B2O3 and MgO additives were analyzed in detail.
机构:
Chinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R ChinaChinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Gao, Yang
Chen, Junjie
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Chinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Chongqing Univ Technol, Sch Mat Sci & Engn, Chongqing, Peoples R ChinaChinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Chen, Junjie
Fang, Weishuang
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Chinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Fang, Weishuang
Peng, Haiyi
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Chinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Peng, Haiyi
Xie, Tianyi
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Chinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Xie, Tianyi
Ren, Haishen
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机构:
Chinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Ren, Haishen
Yao, Xiaogang
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机构:
Chinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R ChinaChinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Yao, Xiaogang
Lin, Huixing
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机构:
Chinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R ChinaChinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 200050, Peoples R China