Superconducting properties of homoepitaxial CVD diamond

被引：97
|
作者：
Takano, Y.
Takenouchi, T.
Ishii, S.
Ueda, S.
Okutsu, T.
Sakaguchi, I.
Umezawa, H.
Kawarada, H.
Tachiki, M.
机构：
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
[2] Waseda Univ, Shinjuku Ku, Tokyo 1698555, Japan
来源：
DIAMOND AND RELATED MATERIALS | 2007年 / 16卷 / 4-7期
关键词：
diamond; superconductivity; boron; MIT;
D O I：
10.1016/j.diamond.2007.01.027
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Superconductivity was achieved above 10 K in heavily boron-doped diamond thin films deposited by the microwave plasma-assisted chemical vapor deposition (CVD) method. Advantages of the CVD method are the controllability of boron concentration in a wide range, and a high boron concentration, compared to those obtained using the high-pressure high-temperature method. The superconducting transition temperatures of homoepitaxial (111) films are determined to be 11.4 K for Tc onset and 8.4 K for zero resistance from transport measurements. In contrast, the superconducting transition temperatures of (100) films T-C onset=6.3 K and T-C zero=3.2 K were significantly suppressed. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：911 / 914
页数：4
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