First principles calculations on magnetic and optical properties of (Cr, Mn) co-doped 4H-SiC

被引:1
|
作者
Liang, Tong [1 ]
Chen, Ruixin [2 ]
Xu, Shunwei [3 ]
机构
[1] Yellow River Conservancy Tech Inst, Kaifeng, Peoples R China
[2] Henan Polytech Univ, Sch Mat Sci & Engn, Cultivating Base Key Lab Environm Friendly Inorga, Jiaozuo, Henan, Peoples R China
[3] Henan Polytech Univ, Sch Math & Informat, Jiaozuo 454000, Henan, Peoples R China
基金
中国国家自然科学基金;
关键词
First principle; magnetic property; electronic structure; optical property; 4H-SiC; AL; FERROMAGNETISM; SEMICONDUCTOR; STABILITY; INJECTION; NI;
D O I
10.1080/00268976.2021.1953171
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
By means of first-principles calculations, we investigate the effect of Cr, Mn impurities on the magnetic and optical properties of 4H-SiC. We find the Cr atom monodoped 4H-SiC has the more stable configuration. The Cr monodoped, Co monodoped, (Cr, Co) co-doped and (Cr, Co, V-Si) co-doped 4H-SiC system all can induce magnetism. The results indicate that (Cr, Co) co-doped 4H-SiC has the strongest ferromagnetism with Delta E of -489.7 meV. The magnetic coupling between the magnetic moments and the strong ferromagnetic coupling caused by Cr and Mn doping can be attributed to the p-d hybrid interaction. The silicon vacancy has a negative influence on the local magnetic moments of Mn atom of (Cr, Mn) co-doped 4H-SiC. When transition metals (TM = Cr, Mn atoms) are introduced into 4H-SiC, the imaginary part of the dielectric function and the adsorption spectrum are both red-shifted with the change of band gap. The results provide a new route for the potential applications of dilute magnetic semiconductors in spintronic devices by transition metal (TM = Cr, Mn atoms) doped 4H-SiC.
引用
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页数:10
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