Exciton dynamics in homoepitaxial GaN

被引：7
|
作者：
Monemar, B [1 ]
Bergman, JP
Ivanov, IG
Baranowski, JM
Pakula, K
Grzegory, I
Porowski, S
机构：
[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
[2] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland
[3] Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland
来源：
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词：
homoepitaxy; free excitons; bound excitons; capture; transfer; radiative lifetime; defects;
D O I：
10.4028/www.scientific.net/MSF.264-268.1275
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transient photoluminescence data with picosecond resolution is reported for homoepitaxial GaN layers grown with MOCVD. In the present: samples, with doping concentration in the 10(17) cm(-3) range, the free exciton (FE) decay time is less than 100 ps at 2 K, mainly due to capture to the shallow impurities. The donor bound exciton (DBE) decay time is also short, < 140 ps, influenced by excitation transfer to nonradiative defects. The shallow acceptor (probably Mg-related) bound exciton (ABE) has a well defined radiative decay time of about 800 ps.
引用
收藏
页码：1275 / 1278
页数：4
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