Stability of a micromechanical pull-in voltage reference

被引：7

作者：

Rocha, LA ^{[1
]}

Cretu, E

Wolffenbuttel, RF

机构：

[1] Delft Univ Technol, Dept Microelect, NL-2628 CD Delft, Netherlands

[2] Melexis, Tessenderlo, Belgium

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 2003年 / 52卷 / 02期

关键词：

DC voltage reference; microelectromechanical systems (MEMS); pull-in stability; reproducibility;

D O I：

10.1109/TIM.2003.810007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The reproducibility over temperature and time of the pull-in voltage of micromechanicat structures has been analyzed and verified using fabricated devices in silicon. The pull-in structures are intended for use as an on-chip voltage reference. Microbeams of 100-mum length, 3-mum width, and 11-mum thickness are electrostatically actuated with a very reproducible pull-in voltage at 9.1 V. Devices demonstrated an initial drift of - 12 mV over 10 days and stabilized within the 500-muV measurement uncertainty. The measured temperature coefficient of -1 mV/K is in good agreement with the analysis and is due to the combined effect of thermal expansion and the temperature dependence of the Young's modulus in silicon.

引用

页码：457 / 460

页数：4

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