Reduced sheet resistance in pentacene field-effect transistors using thiol-modified electrodes

被引：0

作者：

Pham, D. V. ^{[1
]}

Gravenstein, Y. ^{[1
]}

Bock, C. ^{[1
]}

Kunze, U. ^{[1
]}

Kaefer, D. ^{[2
]}

Witte, G. ^{[2
]}

Woell, Ch. ^{[2
]}

机构：

[1] Ruhr Univ Bochum, D-44780 Bochum, Germany

[2] Ruhr Univ Bochum, Phys Chem I, D-44780 Bochum, Germany

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

关键词：

organic field-effect transistor; sheet resistance; parasitic resistance;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An anthracene-2-thiol treatment of the electrodes in bottom-contact pentacene field-effect transistors is used to improve the performance of organic transistors. Transistors with different channel lengths are prepared in order to separate the sheet resistance from the parasitic series resistance of the contacts and leads. The treatment results in a reduced sheet resistance of more than one order of magnitude whereas the parasistic resistance is nearly unaffected.

引用

页码：363 / +

页数：2

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