Graphene Nanoribbons Under Mechanical Strain

被引:42
|
作者
Chen, Changxin [1 ,2 ]
Wu, Justin Zachary [1 ]
Lam, Kai Tak [3 ]
Hong, Guosong [1 ]
Gong, Ming [1 ]
Zhang, Bo [1 ]
Lu, Yang [3 ]
Antaris, Alexander L. [1 ]
Diao, Shuo [1 ]
Guo, Jing [3 ]
Dai, Hongjie [1 ]
机构
[1] Stanford Univ, Dept Chem & Lab Adv Mat, Stanford, CA 94305 USA
[2] Shanghai Jiao Tong Univ, Key Lab Thin Film & Micro Fabricat, Natl Key Lab Sci & Technol Micro Nano Fabricat, Minist Educ,Dept Micro Nano Elect,Sch Elect Infor, Shanghai 200240, Peoples R China
[3] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA
基金
美国国家科学基金会; 中国国家自然科学基金;
关键词
TOTAL-ENERGY CALCULATIONS; CARBON NANOTUBES; STRESS;
D O I
10.1002/adma.201403750
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Uniaxial strains are introduced into individual graphene nanoribbons (GNRs) with highly smooth edges to investigate the strain effects on Raman spectroscopic and electrical properties of GNRs. It is found that uniaxial strain downshifts the Raman G-band frequency of GNRs linearly and tunes their bandgap significantly in a non-monotonic manner. The strain engineering of GNRs is promising for potential electronics and photonics applications.
引用
收藏
页码:303 / 309
页数:7
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