Computer simulation of a-Si:H p-i-n solar cells having a microcrystalline silicon p-layer and their analysis

被引:0
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作者
Palit, N [1 ]
Chatterjee, P [1 ]
机构
[1] Indian Assoc Cultivat Sci, Energy Res Unit, Calcutta 700032, W Bengal, India
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T [工业技术];
学科分类号
08 ;
摘要
An integrated electrical-optical model has been used to analyze the performance of hydrogenated amorphous silicon p-i-n solar cells having a hydrogenated microcrystalline silicon (mu c-Si:H) player (window). Our attempts to simulate various experimentally measured solar cell characteristics of such cells available in the literature, indicate that for the same thickness, mu c-Si:H players may have different mobility band gaps (E-mu), which may be linked to different crystalline volume fractions (F-c), Modeling reveals that there is both an optimum value for E-mu (therefore F-c), as well as an optimum thickness of the mu c-Si:H player, for obtaining the best solar cell performance, A thin (8 to 10 nm) film having a rather low crystalline volume fraction (high E-mu) was found from our computer analysis to give the best results.
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页码:1270 / 1273
页数:4
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