Computer simulation of a-Si:H p-i-n solar cells having a microcrystalline silicon p-layer and their analysis

被引:0
|
作者
Palit, N [1 ]
Chatterjee, P [1 ]
机构
[1] Indian Assoc Cultivat Sci, Energy Res Unit, Calcutta 700032, W Bengal, India
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An integrated electrical-optical model has been used to analyze the performance of hydrogenated amorphous silicon p-i-n solar cells having a hydrogenated microcrystalline silicon (mu c-Si:H) player (window). Our attempts to simulate various experimentally measured solar cell characteristics of such cells available in the literature, indicate that for the same thickness, mu c-Si:H players may have different mobility band gaps (E-mu), which may be linked to different crystalline volume fractions (F-c), Modeling reveals that there is both an optimum value for E-mu (therefore F-c), as well as an optimum thickness of the mu c-Si:H player, for obtaining the best solar cell performance, A thin (8 to 10 nm) film having a rather low crystalline volume fraction (high E-mu) was found from our computer analysis to give the best results.
引用
收藏
页码:1270 / 1273
页数:4
相关论文
共 50 条
  • [1] Computer analysis of a-Si:H p-i-n solar cells with a hydrogenated microcrystalline silicon p layer
    Palit, N
    Chatterjee, P
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (12) : 6879 - 6889
  • [2] Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes
    Vygranenko, Y.
    Fathi, E.
    Sazonov, A.
    Vieira, M.
    Nathan, A.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 94 (11) : 1860 - 1863
  • [3] Numerical analysis of a thin microcrystalline p layer in p-i-n a-Si:H solar cells
    Topic, M
    Smole, F
    Furlan, J
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (08) : 4518 - 4521
  • [4] Photocurrent measurements in operating a-Si:H p-i-n solar cells with different p-layer conditions
    Kaplan, R.
    Kaplan, B.
    Alkaya, A.
    Canbolat, H.
    Oezdemir, C.
    SIX INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION, 2007, 899 : 259 - +
  • [5] Effects of mu c-Si p-layer on p-i-n a-Si:H solar cell performance
    Topic, M
    Smole, F
    Furlan, J
    CONFERENCE RECORD OF THE TWENTY FIFTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1996, 1996, : 1109 - 1112
  • [6] Computer simulation of a-Si:H p-i-n and tandem solar cells current density
    Darkwi, AY
    Ibrahim, K
    ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 1996, : 113 - 117
  • [7] Performance analysis of a-Si: H p-i-n solar cells with and without a buffer layer at the p/i interface
    Munyeme, G
    Zeman, M
    Schropp, REI
    van der Weg, WF
    CONFERENCE ON PHOTO-RESPONSIVE MATERIALS, PROCEEDINGS, 2004, : 2298 - 2303
  • [8] Defects genesis in a-Si:H p-i-n solar cells
    Palma, F
    Pastore, A
    PHYSICA SCRIPTA, 1997, 55 (06): : 756 - 762
  • [9] Spectral response of a-Si:H p-i-n solar cells
    Prentice, JSC
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 69 (04) : 303 - 314
  • [10] Roles of microcrystalline silicon p layer as seed, window, and doping layers for microcrystalline silicon p-i-n solar cells
    Fujibayashi, T
    Kondo, M
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (04)