Si texturing with sub-wavelength structures

被引:2
|
作者
Zaidi, SH [1 ]
Brueck, SRJ [1 ]
机构
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
来源
CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年
关键词
D O I
10.1109/PVSC.1997.654056
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Si surface reflection has been investigated with textured structures smaller than the optical wavelengths. This physical optics approach relies on absorption through a wave-guide mechanism, and has been realized for both uniform and random structures. Laser interferometric techniques have been lithography combined with conventional wet and reactive ion etching of Si to form a wide range of nanoscale 1-D & 2-D structures in both single & poly-crystalline Si substrates. Maskless reactive ion etching of Si has also been employed to form highly absorptive nanoscale structures. For identically etched structures, uniform structures showed an order of magnitude smaller reflectance than random structures.
引用
收藏
页码:171 / 174
页数:4
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