RF performance and scaling capability of thin-body GOI and SOI MOSFETs

The DC and RF performance of thin body GOI and SOI MOSFETs are investigated through simulation. The GOI devices show higher drive current, comparable or even a little lower leakage current than SOI, which indicates that GOI devices have the advantage of thin body structure. For analog/RF applications, GOI MOSFETs demonstrate high cut-off frequency (F-T) and g(m)/l(ds) ratio. With the gate length further scaling down, the cut-off frequency of GOI devices is much larger than SOI and the advantage of GOI devices over SOI is much more remarkable. The reduction in the supply voltage brings favorable advantages for the FT improvement of GOI devices. The results suggest that GOI devices exhibit stronger scaling capability than SOI for digital and RF applications, and are more suitable for low-power RF applications.