Crossed Andreev reflection versus electron transfer in three-terminal graphene devices

被引:15
|
作者
Haugen, Havard [1 ]
Huertas-Hernando, Daniel [1 ]
Brataas, Arne [1 ]
Waintal, Xavier [2 ]
机构
[1] Norwegian Univ Sci & Technol, Dept Phys, N-7491 Trondheim, Norway
[2] SPSMS INAC CEA, F-38054 Grenoble 9, France
来源
PHYSICAL REVIEW B | 2010年 / 81卷 / 17期
关键词
MASSLESS DIRAC FERMIONS; QUANTUM TRANSPORT; SUPERCONDUCTOR; DEPENDENCE; MATRIX; STATE; EDGE;
D O I
10.1103/PhysRevB.81.174523
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the transport properties of three-terminal graphene devices, where one terminal is superconducting and two are normal metals. The terminals are connected by nanoribbons. Electron transfer (ET) and crossed Andreev reflection (CAR) are identified via the nonlocal signal between the two normal terminals. Analytical expressions for ET and CAR in symmetric devices are found. We compute ET and CAR numerically for asymmetric devices. ET dominates CAR in symmetric devices, but CAR can dominate ET in asymmetric devices, where only the zero-energy modes of the zigzag nanoribbons contribute to the transport.
引用
收藏
页数:9
相关论文
共 50 条
  • [21] Crossed Andreev reflection in a zigzag graphene nanoribbon-superconductor junction
    Wang, J.
    Liu, S.
    PHYSICAL REVIEW B, 2012, 85 (03)
  • [22] Nanoscale Ferromagnet-Superconductor Devices for Detection of Crossed Andreev Reflection
    Webb, James Luke
    Hickey, Bryan J.
    Burnell, Gavin
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2009, 19 (03) : 706 - 710
  • [23] Molecular three-terminal devices: fabrication and measurements
    van der Zant, HSJ
    Kervennic, YV
    Poot, M
    O'Neill, K
    de Groot, Z
    Thijssen, JM
    Heersche, HB
    Stuhr-Hansen, N
    Bjornholm, T
    Vanmaekelbergh, D
    van Walree, CA
    Jenneskens, LW
    FARADAY DISCUSSIONS, 2006, 131 : 347 - 356
  • [24] Three-terminal Spintronics Devices for CMOS Integration
    Ohno, Hideo
    2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2017,
  • [25] Emerging Three-Terminal Magnetic Memory Devices
    Lee, Seo-Won
    Lee, Kyung-Jin
    PROCEEDINGS OF THE IEEE, 2016, 104 (10) : 1831 - 1843
  • [26] Three-Terminal Spintronics Devices for Integrated Circuits
    Fukami, Shunsuke
    Zhang, Chaoliang
    DuttaGupta, Samik
    Kurenkov, Aleksandr
    Anekawa, Tetsuro
    Ohno, Hideo
    7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016, 2016,
  • [27] Nodal Andreev spectra in multi-Majorana three-terminal Josephson junctions
    Sakurai, Keimei
    Mercaldo, Maria Teresa
    Kobayashi, Shingo
    Yamakage, Ai
    Ikegaya, Satoshi
    Habe, Tetsuro
    Kotetes, Panagiotis
    Cuoco, Mario
    Asano, Yasuhiro
    PHYSICAL REVIEW B, 2020, 101 (17)
  • [28] Crossed Andreev reflection in graphene-based ferromagnet-superconductor structures
    Y.-L. Yang
    C. Bai
    X.-D. Zhang
    The European Physical Journal B, 2009, 72 : 217 - 223
  • [29] Crossed Andreev reflection in graphene-based ferromagnet-superconductor structures
    Yang, Y. -L.
    Bai, C.
    Zhang, X. -D.
    EUROPEAN PHYSICAL JOURNAL B, 2009, 72 (02): : 217 - 223
  • [30] Phase-engineering the Andreev band structure of a three-terminal Josephson junction
    Coraiola, Marco
    Haxell, Daniel Z.
    Sabonis, Deividas
    Weisbrich, Hannes
    Svetogorov, Aleksandr E.
    Hinderling, Manuel
    ten Kate, Sofieke C.
    Cheah, Erik
    Krizek, Filip
    Schott, Ruediger
    Wegscheider, Werner
    Cuevas, Juan Carlos
    Belzig, Wolfgang
    Nichele, Fabrizio
    NATURE COMMUNICATIONS, 2023, 14 (01)