Microwave Nonlinearities in Ge/Si Avalanche Photodiodes having a Gain-Bandwidth Product of 300 GHz

被引：0
|
作者：
Piels, M. [1 ]
Ramaswamy, A. [1 ]
Zaoui, W. Sfar [1 ]
Bowers, J. E. [1 ]
Kang, Y. [2 ]
Morse, M. [2 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Intel Corp, Santa Clara, CA 95054 USA
来源：
OFC: 2009 CONFERENCE ON OPTICAL FIBER COMMUNICATION, VOLS 1-5 | 2009年
关键词：
DISTORTION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The nonlinearity of a 300 GHz gain bandwidth Separate Absorption Charge Multiplication (SACM) Ge/Si avalanche photodiode was examined experimentally for varying multiplication factors. The maximum second order dynamic range was 84.8 dB-Hz(1/2). The largest third order dynamic range was 101.5 dB-Hz(2/3). (C)2008 Optical Society of America
引用
收藏
页码：1158 / +
页数：2
相关论文
共 50 条
  • [21] Two-dimensional modeling of AlInAs avalanche photodiodes for high gain-bandwidth product
    Xiao, Yegao
    Li, Zhiqiang
    Lestrade, Michel
    Li, Zhanming S.
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXV, 2017, 10098
  • [22] 80 GHz bandwidth-gain-product Ge/Si avalanche photodetector by selective Ge growth
    Wang, Xiaoxin
    Chen, Liang
    Chen, Wang
    Cui, Hailin
    Hu, Yan
    Cai, Pengfei
    Yang, Rong
    Hong, Ching-Yin
    Pan, Dong
    Ang, Kah-Wee
    Yu, Ming Bin
    Fang, Qing
    Lo, Guo Qiang
    OFC: 2009 CONFERENCE ON OPTICAL FIBER COMMUNICATION, VOLS 1-5, 2009, : 1164 - +
  • [23] Avalanche photodiode with ultrahigh gain-bandwidth product of 1,033 GHz
    Shi, Yang
    Li, Xiang
    Chen, Guanyu
    Zou, Mingjie
    Cai, Hongjun
    Yu, Yu
    Zhang, Xinliang
    NATURE PHOTONICS, 2024, 18 (06) : 610 - 616
  • [24] Low dark current and high gain-bandwidth product of avalanche photodiodes: optimization and realization
    Wang, Hui
    Yang, Xiaohong
    Wang, Rui
    He, Tingting
    Liu, Kaibao
    OPTICS EXPRESS, 2020, 28 (11) : 16211 - 16229
  • [25] High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect
    Wenzhou Wu
    Buwen Cheng
    Jun Zheng
    Zhi Liu
    Chuanbo Li
    Yuhua Zuo
    Chunlai Xue
    Journal of Semiconductors, 2017, (11) : 59 - 63
  • [26] High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect
    Wenzhou Wu
    Buwen Cheng
    Jun Zheng
    Zhi Liu
    Chuanbo Li
    Yuhua Zuo
    Chunlai Xue
    Journal of Semiconductors, 2017, 38 (11) : 59 - 63
  • [27] High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth product
    Nie, H
    Anselm, KA
    Hu, C
    Murtaza, SS
    Streetman, BG
    Campbell, JC
    APPLIED PHYSICS LETTERS, 1997, 70 (02) : 161 - 163
  • [28] Gain-bandwidth product of AlGaSb avalanche photodiodes analyzed by using equivalent multiplication region method
    Ito, Masanori
    Mikawa, Takahashi
    Wada, Osamu
    Electron device letters, 1992, v (0n): : 230 - 231
  • [29] Research on high gain-bandwidth product mid-wavelength infrared HgCdTe avalanche photodiodes
    Xie, Hao
    Guo, Huijun
    Zhu, Liqi
    Yang, Liao
    Shen, Chuan
    Chen, Baile
    Chen, Lu
    He, Li
    EARTH AND SPACE: FROM INFRARED TO TERAHERTZ, ESIT 2022, 2023, 12505
  • [30] High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit
    Marshall, Andrew R. J.
    Ker, Pin Jern
    Krysa, Andrey
    David, John P. R.
    Tan, Chee Hing
    OPTICS EXPRESS, 2011, 19 (23): : 23341 - 23349
12345