Preparative technique of ZnO thin film and application research in solar cell

ZnO thin film is one new direct band-gap broadband of semiconducting material with perfect qualitative of piezoelectricity, photoelectricity, air sensitivity, and pressure sensitivity. The room temperature of this energy gap is about 3.37 eV, and exciton binding energy is high to 60 meV. Moreover, it can realize ultraviolet laser emission in normal room temperature, which has wide application in luminous diode, optical detector, electro-fluorescent device, transparent conducting films, and surface acoustic wave. This paper analyzes characteristics of ZnO thin film, researches key technique of RF magnetron sputtering, and ZnO thin film application and precaution in solar cell application.