Homogeneous linewidth and dephasing times of excitons in CuBr quantum dots

被引:0
|
作者
Gilliot, P [1 ]
Moniatte, J [1 ]
Cregut, O [1 ]
Levy, R [1 ]
机构
[1] ECPM, ULP, CNRS, UMR 46,GONLO,IPCMS, F-67037 Strasbourg, France
来源
关键词
D O I
10.1002/1521-396X(199711)164:1<441::AID-PSSA441>3.0.CO;2-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study CuBr nanocrystals embedded in a borosilicate matrix. The excitonic absorption line is strongly inhomogeneously broadened by the size dispersion of the quantum dots. We explore two ways in order to study the dephasing processes of the transition. The homogeneous absorption linewidth is first determined by spectral hole-burning (SHB) measurements, using a nanosecond dye laser excitation. We then perform degenerate four-wave-mixing experiments (FWM), using 100 fs pulses from a frequency-doubled Ti:sapphire laser. Due to the inhomogeneous broadening, we observe a so-called photon-echo signal and we measure its dynamics. From SHB experiments, we obtain homogeneous linewidths larger than 0.3 meV. From the FWM experiment, we obtain values smaller than 0.2 meV. These discrepancies between SHB and FWM measurements can be explained if we take into account the high excitation intensity necessary to induce absorption saturation in SHB experiments. Moreover, during the 20 ns pulses used, spectral diffusion may occur due to interactions between the nanocrystals and their matrix. Spectrally resolved four-wave-mixing experiments (SR-FWM) are also performed. The oscillations with a 250 fs period we observe at short time delays could be interpreted in terms of quantum beats between two-exciton and one-exciton states.
引用
收藏
页码:441 / 444
页数:4
相关论文
共 50 条
  • [31] Homogeneous linewidth and relaxation of excited hole states in II-VI quantum dots
    Woggon, U.
    Gaponenko, S.V.
    Uhrig, A.
    Langbein, W.
    Klingshirn, C.
    Advanced Materials for Optics and Electronics, 1994, 3 (1-6): : 141 - 150
  • [32] Excitation, dynamics and dephasing in quantum dots
    Stoneham, AM
    McKinnon, BA
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (34) : 7665 - 7677
  • [33] Dephasing processes in InGaAs quantum dots
    Borri, P
    Langbein, W
    Schneider, S
    Woggon, U
    Sellin, RL
    Ouyang, D
    Bimberg, D
    PHYSICS OF SEMICONDUCTORS 2002, PROCEEDINGS, 2003, 171 : 205 - 212
  • [34] Excitons in InP quantum dots
    Fu, HX
    Zunger, A
    PHYSICAL REVIEW B, 1998, 57 (24) : 15064 - 15067
  • [35] Excitons in coupled quantum dots
    Xin, X
    Yuan, PF
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (11) : 2301 - 2306
  • [36] Excitons in CdSe quantum dots
    Laheld, UEH
    Einevoll, GT
    PHYSICAL REVIEW B, 1997, 55 (08): : 5184 - 5204
  • [37] Electrons and excitons in quantum dots
    Hawrylak, P
    PHYSICA E, 2001, 11 (2-3): : 53 - 58
  • [38] CONFINEMENT OF EXCITONS IN QUANTUM DOTS
    EINEVOLL, GT
    PHYSICAL REVIEW B, 1992, 45 (07): : 3410 - 3417
  • [39] Excitons in inhomogeneous quantum dots
    Ferreyra, JM
    Proetto, CR
    PHYSICAL REVIEW B, 1998, 57 (15): : 9061 - 9068
  • [40] HOMOGENEOUS LINEWIDTH OF EXCITONS IN SEMIMAGNETIC CDTE/CD1-XMNXTE MULTIPLE-QUANTUM WELLS
    HELLMANN, R
    KOCH, M
    FELDMANN, J
    CUNDIFF, ST
    GOBEL, EO
    YAKOVLEV, DR
    WAAG, A
    LANDWEHR, G
    PHYSICAL REVIEW B, 1993, 48 (04): : 2847 - 2850