Crystallinity improvement of Hg1-xCdxTe films grown by a liquid-phase epitaxial technique

被引：0

作者：

Li, B ^{[1
]}

Zhang, XP ^{[1
]}

Zhu, JQ ^{[1
]}

Chu, JH ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷

关键词：

Hg1-xCdxTe; crystallinity; liquid-phase epitaxy; meltetch;

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Work was done, with emphasis on modifying substrate orientation and liquid-phase epitaxy (LPE) mode, to improve the crystallinity of Hg1-xCdxTe epitaxial layers. The results show that the epilayers grown on the 1.2 degrees-2 degrees off (1 1 1)A substrate exhibit better crystal quality and fewer Te precipitates than those grown on other tilted substrates. Further, an adequate meltetch of substrate before LPE provides a fresh surface for epitaxial growth, while a meltetch of the epilayer at the end of LPE prevents spurious growth and melt sticking. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：1242 / 1246

页数：5

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