Growth and characterization of nitrogen-doped single-walled carbon nanotubes by water-plasma chemical vapour deposition

被引:22
|
作者
Min, Yo-Sep
Bae, Eun Ju
Asanov, Igor P.
Kim, Un Jeong
Park, Wanjun [1 ]
机构
[1] Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea
[2] Samsung Adv Inst Technol, Mat & Devices Res Ctr, Gyeonggi Do 449712, South Korea
关键词
D O I
10.1088/0957-4484/18/28/285601
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Nitrogen- doped single-walled carbon nanotubes (N-SWNTs) are directly grown on SiO2/Si substrates at 450 degrees C with methane and ammonia gases by water-plasma chemical vapour deposition. The strongest radial breathing mode peak in Raman spectra of the grown N-SWNTs, probed with a 633 nm laser excitation, was assigned to (7, 5) semiconducting nanotubes with a diameter of 0.83 nm. As the doped nitrogen content increases, the D-band to G-band ratio in Raman spectra, indicating the imperfection of nanotubes, gradually increases and saturates at around 4%. X-ray photoelectron spectroscopy shows that nitrogen atoms are doped with a pyridine-like configuration in the N-SWNTs.
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页数:4
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