Positron Characteristics in Cadmium and Zinc Chalcogenides

被引:0
|
作者
Bouarissa, N. [1 ]
Rouabah, Z. [2 ]
Champion, C. [3 ]
机构
[1] Univ Msila, Lab Mat Phys & Its Applicat, Msila 28000, Algeria
[2] Univ Bordj Bou Arreridj, Lab Mat & Syst Elect, Bordj Bou Arreridj 34265, Algeria
[3] Univ Bordeaux 1, CNRS, IN2P3, CENBG, F-33405 Talence, France
关键词
positron affinity; positron diffusion constant; chalcogenides; interfaces; hetero-structures; ENERGY-LEVELS; PRESSURE-DEPENDENCE; SEMICONDUCTORS; METALS; CONSTANTS; ELECTRON; SOLIDS; CD1-XZNXTE; DIFFUSION; SURFACES;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Electron energy levels and positron states have been calculated for cadmium and zinc chalcogenide compounds within the pseudo-potential approach and the independent particle model. Furthermore, the present contribution deals with the electron and positron chemical potentials allowing the calculation of the positron affinity to different materials of interest and hetero-structures formed by these materials. Besides, we here determine the positron diffusion constant by means of the positron deformation potential. An attempt has been made to scale positron affinity and diffusion constant with the lattice constant and the band gap energy, respectively. Such scaling is found to be not possible. The information gathered by the present study is of prime importance for a better understanding of positron trapping at interfaces and precipitates and should be useful in slow positron beam experiments.
引用
收藏
页码:617 / 621
页数:5
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