1030 nm DBR tapered diode laser with up to 16 W of optical output power

被引：5
|
作者：
Mueller, A. [1 ]
Zink, C. [1 ]
Fricke, J. [1 ]
Bugge, F. [1 ]
Brox, O. [1 ]
Erbert, G. [1 ]
Sumpf, B. [1 ]
机构：
[1] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany
来源：
NOVEL IN-PLANE SEMICONDUCTOR LASERS XVI | 2017年 / 10123卷
关键词：
Diode laser; tapered diode laser; distributed Bragg reflector; narrow bandwidth; high brightness; 2ND-HARMONIC GENERATION; GREEN LIGHT; BRIGHTNESS;
D O I：
10.1117/12.2251845
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 1030 nm distributed Bragg reflector (DBR) tapered diode laser with optimized vertical layer structure and lateral design is presented. At a heatsink temperature of 15 degrees C the developed laser provides up to 16 W of optical output power. The maximum electro-optical efficiency is 57%. Intrinsic wavelength stabilization is obtained by a 7 th order DBR grating and results in a narrowband emission over the whole power range. Ion implantation next to the ridge-waveguide is applied in order to suppress propagation of unwanted lateral side modes. The highest diffraction-limited central lobe power measured for this device is 9.1 W. With these properties the presented high brightness laser is suitable for applications such as nonlinear frequency conversion.
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页数：7
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