High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator

被引：5
|
作者：
Hosomi, Daiki [1 ]
Furuoka, Keita [1 ]
Chen, Heng [1 ]
Saito, Saki [1 ]
Kubo, Toshiharu [1 ]
Egawa, Takashi [1 ,2 ]
Miyoshi, Makoto [1 ,2 ]
机构：
[1] Nagoya Inst Technol, Res Ctr Nano Devices & Adv Mat, Nagoya, Aichi 4668555, Japan
[2] Nagoya Inst Technol, Innovat Ctr Multibusiness Nitride Semicond, Nagoya, Aichi 4668555, Japan
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2019年 / 37卷 / 04期
关键词：
PERFORMANCE; HEMT;
D O I：
10.1116/1.5097338
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, Al2O3-gate-insulated metal-insulator-semiconductor (MIS) heterostructure field-effect transistors (HFETs) were fabricated using an Al0.61Ga0.37In0.02N/Al0.18Ga0.82N two-dimensional-electron-gas heterostructure, and their electrical properties were characterized. It was confirmed that the thermally stable quaternary AlGaInN barrier layer contributed to a good ohmic contact resistance of 10.5 Omega mm. This value seemed to be considerably small as an AlGaN-channel heterostructure. The fabricated MIS-HFETs showed good pinch-off characteristics and exhibited a maximum drain current (I-DSmax) of approximately 180 mA/mm at the gate bias of +2 V. A high off-state breakdown voltage of 2.5 kV was obtained for the device with a gate-to-drain length of 20 mu m. Published by the AVS.
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页数：4
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