Electric and photoelectric properties of n-GaxIn1-xN/p-Si anisotypic heterojunctions

被引：5
|
作者：
Aleksandrov, SE [1 ]
Zykov, VA [1 ]
Gavrikova, TA [1 ]
Krasovitskii, DM [1 ]
机构：
[1] St Petersburg State Univ, St Petersburg 195251, Russia
来源：
SEMICONDUCTORS | 1998年 / 32卷 / 04期
关键词：
D O I：
10.1134/1.1187407
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have developed a technology for producing n-type GaxIn1-xN/p-Si heterostructures by combined pyrolysis of indium and gallium monoammoniate chlorides, making it possible to obtain heterolayers with composition varying over wide limits (from GaN up to InN). The composition and basic electric and optical characteristics of nitride films were determined. The electric and photoelectric properties of the heterostructures with GaxIn1-xN films of different composition were investigated. It was shown that the anisotypic heterojunction n-GaxIn1-xN/p-Si is a promising photosensitive element for detecting visible-range radiation. The maximum values of the specific detectivity were D*=1.2x10(11) Hz(1/2).W-1 at 290 K. A band diagram of the heterojunction was constructed. (C) 1998 American Institute of Physics.
引用
收藏
页码：412 / 416
页数：5
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