Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance

被引：8

作者：

Ajima, Yoshiaki ^{[1
]}

Nakamura, Yuki ^{[1
]}

Murakami, Kenta ^{[1
]}

Teramoto, Hideo ^{[1
]}

Jomen, Ryota ^{[1
]}

Xing Zhiwei ^{[2
]}

Dai, Pan ^{[2
]}

Lu, Shulong ^{[2
]}

Uchida, Shiro ^{[1
]}

机构：

[1] Chiba Inst Technol, Narashino, Chiba 2750016, Japan

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Jiangsu, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 10期

关键词：

ARTIFICIAL PHOTOSYNTHESIS; WATER; HYDROGEN; SI;

D O I：

10.7567/APEX.11.106501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical properties of room-temperature bonded wafers made from materials with different lattice constants, such as p-GaAs and n-Si, p-GaAs and n-Si [both with an indium tin oxide (ITO) surface layer], and n-GaN and p-GaAs, were investigated. The bonded p-GaAs//n-Si sample exhibited an electrical interface resistance of 2.8 x 10(-1) Omega.cm(2) and showed ohmic-like characteristics. In contrast, the bonded p-GaAs/ITO//ITO/n-Si sample showed Schottky-like characteristics. The bonded n-GaN//p-GaAs wafer sample exhibited ohmic-like characteristics with an interface resistance of 2.7 Omega.cm(2). To our knowledge, this is the first reported instance of a bonded GaN//GaAs wafer with a low electrical resistance. (C) 2018 The Japan Society of Applied Physics

引用

页数：3

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