Nanoscale Memristor Device as Synapse in Neuromorphic Systems

被引：3339

作者：

Jo, Sung Hyun ^{[1
]}

Chang, Ting ^{[1
]}

Ebong, Idongesit ^{[1
]}

Bhadviya, Bhavitavya B. ^{[1
]}

Mazumder, Pinaki ^{[1
]}

Lu, Wei ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

NANO LETTERS | 2010年 / 10卷 / 04期

基金：

美国国家科学基金会;

关键词：

Nanoelectronics; neuromorphic system; memristor; synaptic adaptation; spike-timing dependent plasticity; RESISTANCE; MODEL;

D O I：

10.1021/nl904092h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A memristor is a two-terminal electronic device whose conductance can be precisely modulated by charge or flux through it. Here we experimentally demonstrate a nanoscale silicon-based memristor device and show that a hybrid system composed of complementary metal oxide semiconductor neurons and memristor synapses can support important synaptic functions such as spike timing dependent plasticity. Using memristors as synapses in neuromorphic circuits can potentially offer both high connectivity and high density required for efficient computing.

引用

页码：1297 / 1301

页数：5

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