Review of Nanoscale Memristor Devices as Synapses in Neuromorphic Systems

被引:0
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作者
Serafino, Nathan [1 ]
Zaghloul, Mona [1 ]
机构
[1] George Washington Univ, Sch Engn & Appl Sci, Dept Elect & Comp Engn, Washington, DC 20052 USA
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper is a review paper of a promising study towards the creation of artificial synaptic networks using memristor based synapse devices and other promising research in the field of neuromorphic circuit development. In 2010, Lu et. al utilized Ag/Si memristors incorporated into crossbar synapse networks with CMOS based pre and post synaptic neurons to effectively demonstrate that changes in both pulse height and width from CMOS neurons caused corresponding changes in memductance of memristor synapse. This proved the memristor neuromorphic circuit exhibited behavior analogous to spike timing dependant plasticity, a process which governs strength of interconnects between neurons and vital to learning and memory processes. In this paper we will present overview of the memristor device, and its applications to mimic the neurological processing.
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页码:602 / 603
页数:2
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