Tunneling of electrons through semiconductor superlattices

被引：1
|
作者：
Roy, CL [1 ]
机构：
[1] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India
来源：
BULLETIN OF MATERIALS SCIENCE | 2002年 / 25卷 / 06期
关键词：
semiconductor superlattices; tunneling;
D O I：
10.1007/BF02710529
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The purpose of the present paper is to report a study of tunneling of electrons through semiconductor superlattices (SSL); specially, we have analysed diverse features of transmission coefficient of SSL. The SSL we have considered is Ga0.7Al0.3As-GaAs which has been drawing considerable attention during the recent past on account of some typical features of its band structure. We have indicated how our results would help fabrication of ultra high speed devices.
引用
收藏
页码：469 / 471
页数：3
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