Fabrication and characterization of InGaAlAs/InP based uni-traveling-carrier photodiodes

被引：0
|
作者：
Vukusic, J. [1 ]
Sunnerud, H. [1 ]
Wiberg, A. [1 ]
Sadeghi, M. [1 ]
Andrekson, P. [1 ]
Stake, J. [1 ]
机构：
[1] Chalmers, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
来源：
CONFERENCE DIGEST OF THE 2006 JOINT 31ST INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 14TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS | 2006年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have fabricated and characterized InGaAlAs/InP uni-traveling-carrier photodiodes intended for photo-mixing and data-com applications. Bandwidths up to 60GHz were recorded with 8.5 mu m diameter devices for which a matched, integrated antenna-detector circuit has been designed.
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页码：138 / 138
页数：1
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