Transmission electron microscopy investigation of tin sub-oxide nucleation upon SnO2 deposition on silicon

被引：27
|
作者：
Alfonso, C
Charai, A
Armigliato, A
Narducci, D
机构：
[1] UNIV AIX MARSEILLE 3,FAC SCI & TECH ST JEROME,MET LAB,URA 443,MARSEILLE 20,FRANCE
[2] CNR,LAMEL,I-40129 BOLOGNA,ITALY
[3] UNIV MILAN,INFM,DEPT PHYS CHEM & ELECTROCHEM,I-20133 MILAN,ITALY
来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 09期
关键词：
D O I：
10.1063/1.115970
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Transmission electron microscopy analysis of tin dioxide films grown by aerosol-assisted chemical vapor deposition onto oxidized or etched silicon displayed the formation of a sub-oxide phase that was identified as Sn2O3. Such a phase is observed to disappear upon heat treatment, and is believed to be one of the factors responsible for the instability of tin dioxide films used as gas sensing layers. (C) 1996 American Institute of Physics.
引用
收藏
页码：1207 / 1208
页数：2
相关论文
共 43 条
  • [1] Transmission electron microscopy investigation of SnO2 thin films for sensor devices
    Serventi, AM
    Rickerby, DG
    Horrillo, MC
    Saint-Jacques, RG
    Gutiérrez, J
    NANOSTRUCTURED MATERIALS, 1999, 11 (06): : 813 - 819
  • [2] Characterization of SnO2 films on glass by transmission electron microscopy
    Park, GS
    Yang, GM
    THIN SOLID FILMS, 2000, 365 (01) : 7 - 11
  • [3] High-resolution transmission electron microscopy investigation of nanostructures in SnO2 thin films prepared by pulsed laser deposition
    Chen, ZW
    Lai, JKL
    Shek, CH
    JOURNAL OF SOLID STATE CHEMISTRY, 2005, 178 (03) : 892 - 896
  • [4] Transmission electron microscopy investigation of the effect of deposition conditions and a platinum layer in gas-sensitive r.f.-sputtered SnO2 films
    Serventi, AM
    Rickerby, DG
    Horrillo, MC
    Saint-Jacques, RG
    THIN SOLID FILMS, 2003, 445 (01) : 38 - 47
  • [5] Pt doping of SnO2 thin films -: A transmission electron microscopy analysis of the porosity evolution
    Matko, I
    Gaidi, M
    Chenevier, B
    Charai, A
    Saikaly, W
    Labeau, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (08) : H153 - H158
  • [6] Transmission electron microscopy study of defect structure in epitaxial SnO2 rutile thin film
    Suzuki, T
    Wakabayashi, H
    Nishi, Y
    Fujimoto, M
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2002, 110 (02) : 86 - 91
  • [7] Study of the defects in sintered SnO2 by high-resolution transmission electron microscopy and cathodoluminescence
    Maestre, David
    Ramirez-Castellanos, Julio
    Hidalgo, Pedro
    Cremades, Ana
    Gonzalez-Calbet, Jose M.
    Piqueras, Javier
    EUROPEAN JOURNAL OF INORGANIC CHEMISTRY, 2007, (11) : 1544 - 1548
  • [8] Investigation of zinc-tin-oxide thin-film transistors with varying SnO2 contents
    Po-Jui Kuo
    Sheng-Po Chang
    Shoou-Jinn Chang
    Electronic Materials Letters, 2014, 10 : 89 - 94
  • [9] Investigation of Zinc-Tin-Oxide Thin-Film Transistors with Varying SnO2 Contents
    Kuo, Po-Jui
    Chang, Sheng-Po
    Chang, Shoou-Jinn
    ELECTRONIC MATERIALS LETTERS, 2014, 10 (01) : 89 - 94
  • [10] Growth twins in nanocrystalline SnO2 thin films by high-resolution transmission electron microscopy
    Zheng, JG
    Pan, XQ
    Schweizer, M
    Zhou, F
    Weimer, U
    Gopel, W
    Ruhle, M
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) : 7688 - 7694
12345