Transmission electron microscopy investigation of the effect of deposition conditions and a platinum layer in gas-sensitive r.f.-sputtered SnO2 films

被引:16
|
作者
Serventi, AM
Rickerby, DG
Horrillo, MC
Saint-Jacques, RG
机构
[1] Commiss European Communities, Joint Res Ctr, IHCP, I-21020 Ispra, Italy
[2] INRS Energie, Varennes, PQ J3X 1S2, Canada
[3] CSIC, Ctr Tecnol Fis, Lab Sensores, E-28006 Madrid, Spain
关键词
tin oxide; nanostructured thin films; platinum doping; gas sensors; CHEMICAL SENSORS;
D O I
10.1016/j.tsf.2003.08.056
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
R.f. magnetron sputtering is used to grow nanocrystalline tin oxide (SnO2) thin films on polycrystalline alumina substrates. Films are prepared at the substrate deposition temperature (T-dep) of 20 and 250 degreesC in the presence of 10% of oxygen in the argon atmosphere. Non-reactive depositions are also realized at 250 degreesC. The same technique is used to deposit a thin layer of platinum on the surface of the film or sandwiched between two layers of SnO2 at both temperatures. Specimens are investigated by scanning, conventional and high-resolution transmission electron microscopy. Microstructural observations of SnO2 and Pt/SnO2 thin films are discussed in relation to their electrical behavior and to their responses in gas-sensing applications (to CO and C2H5CHO). In particular, this paper enlightens the effect of an intercolumnar porosity on the gas-sensing behavior. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:38 / 47
页数:10
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