Dielectric properties of Li3VO4 single crystals grown by the Czochralski method

被引:11
|
作者
Kim, DJ [1 ]
Jun, BE
Kim, CS
Kim, HK
Kim, JN
Hwang, YH
机构
[1] Pusan Natl Univ, RCDAMP, Pusan 609735, South Korea
[2] Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
关键词
D O I
10.1063/1.1530363
中图分类号
O59 [应用物理学];
学科分类号
摘要
We studied dielectric properties of Li3VO4 single crystals grown by the Czochralski method along the a axis at temperatures ranging from room temperature to 800degreesC and frequencies ranging from 100 Hz to 15 MHz. We analyzed the impedance data by introducing an equivalent circuit which consists of two parallel combinations of capacitors and resistors in series. The conductivity and the relaxation time of Li3VO4 are found to show the Arrhenius behavior with two different activation energies which crossed over at temperatures around 400degreesC. The observed crossover seems to originate from a dissociation of the Li-O bond at high temperatures. 2003 American Institute of Physics. [DOI: 10.1063/1.1530363].
引用
收藏
页码:1697 / 1700
页数:4
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