Properties of doped GaSb single crystals grown by the czochralski method

被引：1
|
作者：
Sestakova, V
Stepanek, B
Sestak, J
机构：
[1] Institute of Physics, Acad. of Sci. of the Czech Republic, Department of Semiconductors, Praha
[2] Inst. Phys. Acad. Sci. Czech Rep., Department of Semiconductors, 16200 Praha - 6
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1996年 / 31卷 / 07期
关键词：
D O I：
10.1002/crat.2170310721
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The specific electrical properties and average dislocation density of GaSb crystals are shown and discussed regarding various elements presented as dopant. The single crystals were grown by the Czochralski method without encapsulant in a flowing atmosphere of molecular hydrogen, on the one hand, and of atomic hydrogen, on the other hand. The results are summarized in the Table II.
引用
收藏
页码：929 / 934
页数：6
相关论文
共 50 条
  • [1] MANGANESE-DOPED GASB SINGLE-CRYSTALS GROWN BY THE CZOCHRALSKI METHOD
    STEPANEK, B
    HUBIK, P
    MARES, JJ
    KRISTOFIK, J
    SESTAKOVA, V
    PEKAREK, L
    SESTAK, J
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) : 1138 - 1142
  • [2] CZOCHRALSKI GROWN CONCENTRATION PROFILES IN THE UNDOPED AND TE-DOPED GASB SINGLE-CRYSTALS
    STEPANEK, B
    SESTAKOV, V
    THERMOCHIMICA ACTA, 1992, 209 : 285 - 294
  • [3] PROPERTIES OF DOPED SILICON SINGLE-CRYSTALS GROWN BY THE CZOCHRALSKI METHOD AND BY THE METHOD OF RIGIDLY ATTACHED COMMUNICATING VESSELS
    DASHEVSKII, MY
    PETROV, VV
    MIKHNENKO, VM
    INORGANIC MATERIALS, 1987, 23 (03) : 315 - 318
  • [4] CZOCHRALSKI GROWTH OF TE-DOPED GASB SINGLE-CRYSTALS
    STEPANEK, B
    SESTAKOVA, V
    SESTAK, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 20 (03): : 249 - 255
  • [5] Microstructural and thermoelectric properties of PbTe single crystals as grown by Czochralski method
    Seetawan, Tosawat
    Vora-Ud, Athron
    Ullah, Fawad
    Thang, Phan Bach
    Kumar, Manish
    Kim, Hong Joo
    MATERIALS LETTERS, 2022, 324
  • [6] STUDY OF DISLOCATION DENSITY IN TE-DOPED GASB SINGLE-CRYSTALS GROWN BY MEANS OF CZOCHRALSKI TECHNIQUE
    SESTAKOVA, V
    STEPANEK, B
    THERMOCHIMICA ACTA, 1992, 209 : 277 - 284
  • [7] Defect Structure of Tin-Doped InAs Single Crystals Grown by the Czochralski Method
    Sanjarovskii, N. A.
    Parfenteva, I. B.
    Yugova, T. G.
    Knyazev, S. N.
    CRYSTALLOGRAPHY REPORTS, 2022, 67 (07) : 1095 - 1098
  • [8] Defect Structure of Tin-Doped InAs Single Crystals Grown by the Czochralski Method
    N. A. Sanjarovskii
    I. B. Parfenteva
    T. G. Yugova
    S. N. Knyazev
    Crystallography Reports, 2022, 67 : 1095 - 1098
  • [9] DISLOCATIONS IN GAAS SINGLE CRYSTALS GROWN BY CZOCHRALSKI METHOD
    PEKAREK, L
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1968, 18 (09) : 1172 - &
  • [10] CHARACTERIZATION OF EXTENDED DEFECTS IN HIGHLY TE-DOPED (111) GASB SINGLE-CRYSTALS GROWN BY THE CZOCHRALSKI TECHNIQUE
    DOERSCHEL, J
    GEISSLER, U
    JOURNAL OF CRYSTAL GROWTH, 1992, 121 (04) : 781 - 789
12345