Properties of doped GaSb single crystals grown by the czochralski method

被引：1
|
作者：
Sestakova, V
Stepanek, B
Sestak, J
机构：
[1] Institute of Physics, Acad. of Sci. of the Czech Republic, Department of Semiconductors, Praha
[2] Inst. Phys. Acad. Sci. Czech Rep., Department of Semiconductors, 16200 Praha - 6
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1996年 / 31卷 / 07期
关键词：
D O I：
10.1002/crat.2170310721
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The specific electrical properties and average dislocation density of GaSb crystals are shown and discussed regarding various elements presented as dopant. The single crystals were grown by the Czochralski method without encapsulant in a flowing atmosphere of molecular hydrogen, on the one hand, and of atomic hydrogen, on the other hand. The results are summarized in the Table II.
引用
收藏
页码：929 / 934
页数：6
相关论文
共 50 条
  • [31] VOLUME DISTRIBUTION OF OXYGEN IN SILICON SINGLE-CRYSTALS GROWN BY CZOCHRALSKI METHOD
    IVANENKO, NP
    KIRILLOVA, LG
    LYUBCHENKO, TP
    PELEVIN, OV
    PETROV, GN
    SHPANKO, VI
    INORGANIC MATERIALS, 1991, 27 (11) : 1903 - 1909
  • [32] DISLOCATION-FREE SILVER SINGLE-CRYSTALS GROWN BY CZOCHRALSKI METHOD
    TANNER, BK
    ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, 1973, A 28 (05): : 676 - &
  • [33] DISLOCATIONS OF SALOL CRYSTALS GROWN BY THE CZOCHRALSKI METHOD
    INOUE, T
    JIM, WQ
    KOMATSU, H
    CRYSTAL RESEARCH AND TECHNOLOGY, 1985, 20 (02) : 195 - 200
  • [34] Orthoferrite single crystals growing by modified Czochralski method and their properties
    Balbashov, AM
    JOURNAL DE PHYSIQUE IV, 1997, 7 (C1): : 349 - 350
  • [35] Characterisation of the Defect Structure in Gadolinum Orthovanadate Single Crystals Grown by the Czochralski Method
    Wierzbicka, E.
    Malinowska, A.
    Wieteska, K.
    Wierzchowski, W.
    Lefeld-Sosnowska, M.
    Swirkowicz, M.
    Lukasiewicz, T.
    Paulmann, C.
    ACTA PHYSICA POLONICA A, 2012, 121 (04) : 906 - 909
  • [36] OXYGEN-CONTENT OF SINGLE-CRYSTALS OF SILICON GROWN BY THE CZOCHRALSKI METHOD
    SALNIK, ZA
    MAKEEV, KI
    ERMOLAEV, SN
    MILVIDSKII, MG
    INORGANIC MATERIALS, 1984, 20 (02) : 153 - 155
  • [37] THE TWISTING OF LINBO3 SINGLE-CRYSTALS GROWN BY THE CZOCHRALSKI METHOD
    ERDEI, S
    GABRIELJAN, VT
    CRYSTAL RESEARCH AND TECHNOLOGY, 1989, 24 (10) : 987 - 990
  • [38] Spectroscopic characterization of Yb3+-doped YLiF4 laser single crystals grown by the Czochralski method
    Bensalah, A
    Guyot, Y
    Brenier, A
    Sato, H
    Fukuda, T
    Boulon, G
    JOURNAL DE PHYSIQUE IV, 2004, 119 : 125 - 127
  • [39] Effect of a Travelling Magnetic Field on the Parameters of Tellurium-Doped Gallium Arsenide Single Crystals Grown by the Czochralski Method
    Yugova, T. G.
    Chuprakov, V. A.
    Sanzharovsky, N. A.
    Yugov, A. A.
    Martynov, I. D.
    Knyazev, S. N.
    CRYSTALLOGRAPHY REPORTS, 2022, 67 (07) : 1099 - 1104
  • [40] Effect of a Travelling Magnetic Field on the Parameters of Tellurium-Doped Gallium Arsenide Single Crystals Grown by the Czochralski Method
    T. G. Yugova
    V. A. Chuprakov
    N. A. Sanzharovsky
    A. A. Yugov
    I. D. Martynov
    S. N. Knyazev
    Crystallography Reports, 2022, 67 : 1099 - 1104
12345