Key issues associated with low threshold current density for InP-based quantum cascade lasers

被引：3

作者：

Li, A. Z. ^{[1
]}

Li, H. ^{[1
]}

Xu, G. Y. ^{[1
]}

Zhang, Y. G. ^{[1
]}

Lin, C. ^{[1
]}

Zhu, C. ^{[1
]}

Wei, L. ^{[1
]}

Li, Y. Y. ^{[1
]}

机构：

[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷 / 129-133期

关键词：

molecular beam epitaxy; phosphides; infrared devices; QC laser;

D O I：

10.1016/j.jcrysgro.2006.11.266

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A set of room temperature low threshold current densities of a mid-infrared InP-based quantum cascade lasers (QCLs) have been demonstrated. Threshold current densities as low as 1.7 kA/cm(2) for multi-mode Fabry-Perot QCLs at an emission wavelength of 7.6 mu m and 0.9 kA/cm(2) for single-mode distributed feedback QCLs at an emission wavelength of 7.7 mu m have been achieved at 300 K. The results obtained are through the precision control of doping incorporation and concentration, the active region of the structure for suppressing the current leakage, and the low resistance material choice in the wave guide cladding and plasmon for improving heat dissipation. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：129 / 133

页数：5

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