Holographic recording in amorphous chalcogenide thin films

被引:4
|
作者
Teteris, J. [1 ]
Reinfelde, Mara [1 ]
机构
[1] Latvian State Univ, Inst Solid State Phys, LV-1063 Riga, Latvia
关键词
amorphous semiconductors; photoinduced effects; chalcogenides;
D O I
10.1016/j.jnoncrysol.2006.09.069
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Holographic recording by He-Ne laser (line 632.8 nm) light in amorphous As0.55Se0.45 thin films for different film thickness and grating period was studied. A strong dependence of the diffraction efficiency of the gratings on the readout light wavelength (650 nm, 805 nm and 1150 nm) was observed. A decrease in diffraction efficiency for longer wavelengths is explained by a decrease in the photoinduced changes of refractive index. It is shown that high efficiency gratings can be recorded in As0.55Se0.45 films with a thickness of similar to 1 gm. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:1450 / 1453
页数:4
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