Fabrication of high-performance InP MESFETs with in-situ pulse-plated metal gates

被引：0
|
作者：
Uno, S [1 ]
Hashizume, T [1 ]
Sato, T [1 ]
Hasegawa, H [1 ]
机构：
[1] HOKKAIDO UNIV,RES CTR INTERFACE QUANTUM ELECTR,SAPPORO,HOKKAIDO 060,JAPAN
来源：
1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS | 1996年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：338 / 341
页数：4
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