Rolled-up InGaAs/GaAs/RGO trilayer microtubes: Fabrication, characterizations and rolling behaviors

被引:1
|
作者
Chai, Zhaoer [1 ]
Wang, Qi [1 ]
Liu, Hao [1 ]
Xu, Jiyu [1 ]
Liu, Kai [1 ]
Ren, Xiaomin [1 ]
机构
[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
基金
中国国家自然科学基金;
关键词
III-V semiconductor; Reduced graphene oxide; Microtube; Rolling state; Strain transition; GRAPHENE OXIDE; CVD GRAPHENE; ARCHITECTURE; RAMAN;
D O I
10.1016/j.mssp.2019.104696
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, single-crystalline III-V semiconductor/reduced graphene oxide (RGO) hybrid microtubes have been successfully fabricated via the self-rolling of the dip-coated RGO layers together with the bottom InGaAs/GaAs strained bilayers, which makes the self-rolled-up RGO layers as the innermost walls. Structural and optical characterizations were performed using scanning electron microscopy (SEM) and micro-Raman spectroscopy, respectively, revealing that similar to 30 nm-thick RGO layers were rolled-up into InGaAs/GaAs microtubes and the highly-ordered hybrid microtube array were also realized. Moreover, spectral redshifts of Raman characteristic peaks of both GaAs and RGO were observed in two rolling behaviors, i.e., partly releasing and rolling, both demonstrating the strain transition phenomenon. Our study offers a feasible route for the future 3D integration of RGO onto Lab-on-a-chip, Lab-in-a-tube and etc.
引用
收藏
页数:5
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