Tunnelling transient spectroscopy on self-assembled InAs quantum dots

被引：0

作者：

Schramm, A. ^{[1
]}

Schulz, S. ^{[1
]}

Schaefer, J. ^{[1
]}

Heyn, Ch. ^{[1
]}

Hansen, W. ^{[1
]}

机构：

[1] Univ Hamburg, Inst Phys Appl, Jungiusstr 11, D-20355 Hamburg, Germany

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study electron tunnelling from self-assembled InAs quantum dots with time-resolved capacitance measurements at low temperature (T 10 K). Within a simple WKB model the electric field dependence of the tunnelling rate is analyzed. The data reveal that tunnelling emission from s- and p-like quantum dot states can clearly be resolved. The binding energies obtained from a triangular-well model are in good agreement with values obtained with DLTS experiments.

引用

页码：763 / +

页数：2

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