Tunnelling transient spectroscopy on self-assembled InAs quantum dots

被引：0
|
作者：
Schramm, A. [1 ]
Schulz, S. [1 ]
Schaefer, J. [1 ]
Heyn, Ch. [1 ]
Hansen, W. [1 ]
机构：
[1] Univ Hamburg, Inst Phys Appl, Jungiusstr 11, D-20355 Hamburg, Germany
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We study electron tunnelling from self-assembled InAs quantum dots with time-resolved capacitance measurements at low temperature (T 10 K). Within a simple WKB model the electric field dependence of the tunnelling rate is analyzed. The data reveal that tunnelling emission from s- and p-like quantum dot states can clearly be resolved. The binding energies obtained from a triangular-well model are in good agreement with values obtained with DLTS experiments.
引用
收藏
页码：763 / +
页数：2
相关论文
共 50 条
  • [1] Magneto-tunnelling spectroscopy of single self-assembled InAs quantum dots in AlAs
    Thornton, ASG
    Ihn, T
    Main, PC
    Eaves, L
    Sheard, FW
    Henini, M
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 1998, 2 (1-4): : 657 - 661
  • [2] Deep level transient spectroscopy characterization of InAs self-assembled quantum dots
    Ilchenko, VV
    Lin, SD
    Lee, CP
    Tretyak, OV
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) : 1172 - 1174
  • [3] Luminescence spectroscopy of InAs self-assembled quantum dots
    Wang, PD
    Merz, JL
    MedeirosRibeiro, G
    Fafard, S
    Petroff, PM
    Akiyama, H
    Sakaki, H
    SUPERLATTICES AND MICROSTRUCTURES, 1997, 21 (02) : 259 - 265
  • [4] Luminescence spectroscopy of InAs self-assembled quantum dots
    Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, United States
    不详
    不详
    Superlattices Microstruct, 2 (XXIV-265):
  • [5] Deep level transient spectroscopy of vertically stacked InAs self-assembled quantum dots
    Li, SW
    Koike, K
    Sasa, S
    Inoue, M
    Yano, M
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1289 - 1290
  • [6] Raman spectroscopy characterization of InAs self-assembled quantum dots
    Galzerani, JC
    Pusep, YA
    PHYSICA B-CONDENSED MATTER, 2002, 316 : 455 - 458
  • [7] Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
    Fry, PW
    Itskevich, IE
    Parnell, SR
    Finley, JJ
    Wilson, LR
    Schumacher, KL
    Mowbray, DJ
    Skolnick, MS
    Al-Khafaji, M
    Cullis, AG
    Hopkinson, M
    Clark, JC
    Hill, G
    PHYSICAL REVIEW B, 2000, 62 (24) : 16784 - 16791
  • [8] Absorption spectroscopy of single InAs self-assembled quantum dots
    Alèn, B
    Karrai, K
    Warburton, RJ
    Bickel, F
    Petroff, PM
    Martínez-Pastor, J
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 395 - 399
  • [9] Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
    Fry, PW
    Mowbray, DJ
    Itskevich, IE
    Skolnick, MS
    Barker, JA
    O'Reilly, EP
    Hopkinson, M
    Al-Khafaji, M
    David, JPR
    Cullis, AG
    Hill, G
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 224 (02): : 497 - 502
  • [10] Magnetotunnelling and photoluminescence spectroscopy of self-assembled InAs quantum dots
    Itskevich, IE
    Ihn, T
    Thornton, A
    Henini, M
    Carmona, HD
    Eaves, L
    Main, PC
    Maude, DK
    Portal, JC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6B): : 4073 - 4077
12345