Modeling of metal-semiconductor-metal photodetector for spice

被引：0
|
作者：
Gao, JJ [1 ]
Gao, BX [1 ]
Liang, CG [1 ]
机构：
[1] Tsing Hua Univ, State Key Lab Microwave & Digital Commun, Beijing 100084, Peoples R China
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2000年 / 26卷 / 06期
关键词：
photodetector; device modeling; CAD;
D O I：
10.1002/1098-2760(20000920)26:6<390::AID-MOP12>3.0.CO;2-W
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An equivalent circuit model for a metal-semiconductor-metal (MSM) photodetector based on microwave port characteristics is presented for a SPICE simulator. The experiential formulas of dc characteristics and intrinsic capacitance-voltage characteristics are given. The model parameters are obtained from de and C-V measurement data by using curve fitting. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on MSM PDs of different sizes. (C) 2000 John Wiley & Sons, Inc.
引用
收藏
页码：390 / 394
页数：5
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