The origins of near band-edge transitions in hexagonal boron nitride epilayers

被引：51
|
作者：
Du, X. Z. [1 ]
Li, J. [1 ]
Lin, J. Y. [1 ]
Jiang, H. X. [1 ]
机构：
[1] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA
来源：
APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 05期
基金：
美国国家科学基金会;
关键词：
THERMAL-NEUTRON DETECTORS; DEFECTS;
D O I：
10.1063/1.4941540
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoluminescence spectroscopy has been employed to probe the near band-edge transitions in hexagonal BN (h-BN) epilayers synthesized under varying ammonia flow rates. The results suggest that the quasi-donor-acceptor pair emission line at 5.3 eV is due to the transition between the nitrogen vacancy and a deep acceptor, whereas the 5.5 eV emission line is due to the recombination of an exciton bound to a deep acceptor formed by carbon impurity occupying the nitrogen site. By growing h-BN under high ammonia flow rates, nitrogen vacancy related peaks can be eliminated and epilayers exhibiting pure free exciton emission have been obtained. (C) 2016 AIP Publishing LLC.
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页数：5
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