Structure and charge-state-dependent instability of a hydrogen-carbon complex in silicon

被引:5
|
作者
Kamiura, Y [1 ]
Ishiga, N [1 ]
Ohyama, S [1 ]
Yamashita, Y [1 ]
机构
[1] Okayama Univ, Fac Engn, Okayama 700, Japan
来源
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷
关键词
silicon; hydrogen; carbon; stress; DLTS;
D O I
10.4028/www.scientific.net/MSF.258-263.247
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied the symmetry and structure of a hydrogen-carbon (H-C) complex in Si and the bonding nature of its electronic state by means of DLTS technique under uniaxial stress. Application of < 111 > and < 110 > compression stresses splitted the DLTS peak into two as ratios of 1:3 and 2:2, respectively, which were the ratios of the low-temperature peak to the high-temperature one. No splitting was observed under < 100 > stress. These results clearly indicate the trigonal symmetry of the H-C complex and the anti-bonding nature of its electronic state, and are consistent with the previously proposed model, where hydrogen occupies the bond-centered site between carbon and silicon atoms. We have studied the stability of the complex by annealing with and without reverse bias applied to the Schottky junction. The complex was unstable outside the depletion region, where it was annihilated with an activation energy of 0.7 eV, while inside it was relatively stable and the activation energy was 1.3 eV. From these results, we have concluded that the complex becomes unstable in the neutral charge state by capturing an electron from the conduction band.
引用
收藏
页码:247 / 252
页数:6
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