A new thin-film CuGaSe2/Cu(In,Ga)Se2 bifacial, tandem solar cell with both junctions formed simultaneously

被引：26

作者：

Young, DL ^{[1
]}

Abushama, J ^{[1
]}

Noufi, R ^{[1
]}

Li, XN ^{[1
]}

Keane, J ^{[1
]}

Gessert, TA ^{[1
]}

Ward, JS ^{[1
]}

Contreras, M ^{[1
]}

Symko-Davies, M ^{[1
]}

Coutts, TJ ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190638

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Thin films of CuGaSe2 and Cu(In,Ga)Se-2 were evaporated by the 3-stage process onto opposite sides of a single piece of soda-lime glass, coated bifacially with an n(+)-TCO. Junctions were formed simultaneously with each of the p-type absorbers by depositing thin films of n-CdS via chemical bath deposition (CBD) at 60degreesC. The resulting four-terminal device is a non-mechanically stacked, two-junction tandem. The unique growth sequence protects the temperature-sensitive p/n junctions. The initial device (eta = 3.7%, V-oc = 1.1 V [AM1.5]) suffered from low quantum efficiencies. Initial results are also presented from experiments with variations in growth sequence and back reflectors..

引用

页码：608 / 611

页数：4

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