Annealing behavior of gate oxide leakage current after quasi-breakdown

被引：3
|
作者：
Xu, Z [1 ]
Cho, BJ [1 ]
Li, MF [1 ]
机构：
[1] Natl Univ Singapore, Dept Elect Engn, Singapore 119260, Singapore
来源：
MICROELECTRONICS RELIABILITY | 2000年 / 40卷 / 8-10期
关键词：
D O I：
10.1016/S0026-2714(00)00129-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Annealing behavior of thin gate oxide alter quasi-breakdown (QB) has been investigated. The res;lt implies that the QB leakage current is consisted, of two components: the enhanced tunneling due to locally thinned oxide at interface-damaged region and the conduction through a shortening path. The change of leakage current during annealing is a competitive process of changes of these two components - the recovery of interface damage and the expansion of the shortening path in bulk oxide. A unified model is proposed to explain the mechanism of conduction in QB. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1341 / 1346
页数：6
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