Perspectives on spintronic diodes

被引:28
|
作者
Finocchio, G. [1 ]
Tomasello, R. [2 ]
Fang, B. [3 ]
Giordano, A. [1 ]
Puliafito, V. [4 ]
Carpentieri, M. [5 ]
Zeng, Z. [6 ]
机构
[1] Univ Messina, Dept Math & Comp Sci, Phys Sci & Earth Sci, I-98166 Messina, Italy
[2] FORTH, Inst Appl & Computat Math, GR-70013 Iraklion, Greece
[3] King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia
[4] Univ Messina, Dept Engn, I-98166 Messina, Italy
[5] Polytech Bari, Dept Elect & Informat Engn, I-70125 Bari, Italy
[6] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Multifunct Nanomat & Smart Syst, Ruoshui Rd 398, Suzhou 215123, Peoples R China
基金
美国国家科学基金会;
关键词
RESONANT EXPULSION; SPIN; SENSITIVITY; OSCILLATOR; DETECTOR; DRIVEN;
D O I
10.1063/5.0048947
中图分类号
O59 [应用物理学];
学科分类号
摘要
Spintronic diodes are emerging as disruptive candidates for impacting several technological applications ranging from the Internet of things to artificial intelligence. Here, an overview of the recent achievements on spintronic diodes is briefly presented, underlying the major breakthroughs that have led these devices to have the largest sensitivity measured to date for a diode. For each class of spintronic diodes (passive, active, resonant, nonresonant), we indicate the remaining developments to improve the performances as well as the future directions. We also devoted the last part of this Perspective to ideas for developing spintronic diodes in multiphysics systems by combining two-dimensional materials and antiferromagnets.
引用
收藏
页数:6
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