Failure mechanisms of GaN HEMTs for microwave and millimeter-wave applications: from interdiffusion effects to hot-electrons degradation

被引：0

作者：

Meneghesso, G. ^{[1
]}

Meneghini, M. ^{[1
]}

De Santi, C. ^{[1
]}

Buffolo, M. ^{[1
]}

Rampazzo, F. ^{[1
]}

Chiocchetta, F. ^{[1
]}

Zhan, G. ^{[1
]}

Sharma, C. ^{[1
]}

Zanoni, E. ^{[1
]}

机构：

[1] Univ Padua, Dept Informat Engn, Via Gradenigo 6-A, I-35131 Padua, Italy

来源：

2021 43RD ANNUAL EOS/ESD SYMPOSIUM (EOS/ESD) | 2021年

关键词：

ALGAN/GAN HEMTS; MOBILITY TRANSISTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gallium Nitride High Electron Mobility Transistor are the most prominent devices for application to high power density, high efficiency transmission system in the microwave and millimeter-wave frequency range. High bandwidth requirements of 5G and future telecommunication infrastructure require the adoption of higher frequency bands beyond 60 GHz, thus accelerating the scaling of devices gate lengths below 150 nm, possibly promoting failure mechanisms accelerated by electric field and hot-electron effects. This paper reviews main failure modes and mechanisms of GaN HEMTs for microwave and millimeter-wave applications(1)

引用

页数：8

共 25 条

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