Structural modifications of SiOx/DLC films by thermal annealing

被引：0
|
作者：
Yang, WJ [1 ]
Niihara, K
Auh, KH
机构：
[1] Hanyang Univ, Ceram Proc Res Ctr, Seoul 133791, South Korea
[2] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan
来源：
JOURNAL OF CERAMIC PROCESSING RESEARCH | 2004年 / 5卷 / 03期
关键词：
SiOx/DLC; microstructure; thermal annealing; Raman; hardness;
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
SiOx/DLC films were deposited on Si substrates using CH4/(C2H5O)(4)Si/Ar gas mixtures by PECVD. The films deposited were identified as atomic-scale composite networks consisting mainly of diamond-like a-C:H and silica-like a-Si:O structures with a smaller contribution of Si-C and GO bonds. Structural modifications of SiOx/DLC films were monitored under thermal annealing in an Ar atmosphere. The structural transitions of the amorphous carbon matrix in the SiOx/DLC films were investigated by a Raman spectrometer. The relationships between the microstructural modifications and mechanical properties are discussed.
引用
收藏
页码：269 / 273
页数：5
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