Current-accelerated channel hot carrier stress of MOS transistors

被引：8
|
作者：
Sah, CT [1 ]
Neugroschel, A [1 ]
Han, KM [1 ]
机构：
[1] Univ Florida, Dept Elect & Comp Engn, Florida Solid State Elect Lab, Gainesville, FL 32611 USA
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 02期
关键词：
D O I：
10.1049/el:19980194
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A channel hot carrier current and the failure rate of n- and p-channel MOS transistors are both increased by one to two orders of magnitude by forward biasing the substrate or source pin junction. Correlations with the hydrogen-bond-breaking theory give a threshold kinetic energy of 3.06 +/- 0.05eV for interface trap generation by hot carriers.
引用
收藏
页码：217 / 219
页数：3
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