Monte Carlo simulation of the positron implantation profiles in the layered samples

被引：0

作者：

Dryzek, Jerzy ^{[1
,2
]}

Horodek, Pawel ^{[1
]}

机构：

[1] Polish Acad Sci, Henryk Niewodniczanski Inst Nucl Phys, PL-31342 Krakow, Poland

[2] Univ Zielona Gora, Inst Phys, PL-65516 Zielona Gora, Poland

来源：

NUKLEONIKA | 2010年 / 55卷 / 01期

关键词：

positron implantation; implantation profile; GEANT4 tool kit;

D O I：

暂无

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Theoretical studies of the positron implantation profiles in the layered samples are presented. Simulations performed using a GEANT4 tool kit revealed accumulation of positrons in denser layer embedded by less dens environment. This effect is significant for implantation profiles of slow positrons formed in a beam. Nevertheless, it is also present in conventional experiments, where positrons are emitted from radioactive nuclei. In some cases the diffusion process, which follows the implantation and thermalization processes, can smear this effect. However, defects on the interfaces or differences in the positron affinity can sustain it.

引用

页码：13 / 16

页数：4

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